| PART |
Description |
Maker |
| 2SC2420 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| S-AV28 |
VHF Band HAM FM RF Power Amplifier Module
|
Toshiba
|
| 2SC3147 |
NPN EPITAXIAL (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| PF0311 |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| 2SK192A E001414 |
N CHANNEL JUNCTION TYPE (FM TUNER/ VHF BAND AMPLIFIER APPLICATIONS)
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)
FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba Semiconductor
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| RFM08U9X |
RF POWER MOSFET FOR VHF.AND UHF.BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SK3075 EE08687 |
From old datasheet system
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
|
TOSHIBA[Toshiba Semiconductor]
|
| PF0314 PF0313 |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| TA4000F |
VHF - UHF WIDE BAND AMPLIFIER
VHF~UHF WIDE BAND AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
